Toshiba Semiconductor and Storage TK56E12N1,S1X

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

6540pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

4V @ 150µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

3mOhm @ 75A, 10V

Series

HEXFET®

Power Dissipation (Max)

300W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-262