Toshiba Semiconductor and Storage TK4R4P06PL,RQ

Product Details

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

200mOhm @ 4.6A, 10V

Series

-

Power Dissipation (Max)

2.5W (Ta), 25W (Tc)

FET Type

N-Channel

Supplier Device Package

D-Pak

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

7.7A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63