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Toshiba Semiconductor and Storage TK4P60DB(T6RSS-Q)
MOSFET N-CH 600V 3.7A DPAK-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- -
- Rds On (Max) @ Id, Vgs
- 8.5mOhm @ 25A, 10V
- Power Dissipation (Max)
- -
- Series
- U-MOSIV
- Supplier Device Package
- TO-220-3
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 54nC @ 10V
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- FET Feature
- -