Toshiba Semiconductor and Storage TK4P60DA(T6RSS-Q)

Product Details

FET Type

N-Channel

Supplier Device Package

D-Pak

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4.4V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

2Ohm @ 1.9A, 10V

Series

π-MOSVII

Power Dissipation (Max)

80W (Tc)