Toshiba Semiconductor and Storage TK40A06N1,S4X

Product Details

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

3.5V @ 150µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

360mOhm @ 3A, 10V

Series

CoolMOS™ P7

Power Dissipation (Max)

26.4W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO220 Full Pack

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

16.4nC @ 10V

Vgs (Max)

±16V

Drain to Source Voltage (Vdss)

700V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

517pF @ 400V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

12.5A (Tc)