Toshiba Semiconductor and Storage TK3R1E04PL,S1X

Product Details

FET Type

N-Channel

Supplier Device Package

PG-TO220-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2730pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

73A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

3.8V @ 49µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

8.3mOhm @ 73A, 10V

Series

OptiMOS™

Power Dissipation (Max)

100W (Tc)