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Toshiba Semiconductor and Storage TK3A65DA(STA4,QM)

MOSFET N-CH 650V 2.5A TO-220SIS

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
1.23
Stock
0

Product Details

FET Type
N-Channel
Supplier Device Package
PG-TO262-3-1
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
75V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
4700pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
7.4mOhm @ 80A, 10V
Series
OptiMOS™
Power Dissipation (Max)
300W (Tc)