Toshiba Semiconductor and Storage TK33S10N1Z,LQ

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2V @ 80µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

13mOhm @ 30A, 10V

Series

OptiMOS™

Power Dissipation (Max)

136W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO252-3-11

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

55V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V