Toshiba Semiconductor and Storage TK20A60W5,S5VX

Product Details

Rds On (Max) @ Id, Vgs

13Ohm @ 500mA, 10V

Series

Polar™

Power Dissipation (Max)

86W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-263 (IXTA)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

24.8nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

1200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

666pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4.5V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)