Toshiba Semiconductor and Storage TK1K2A60F,S4X

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

444pF @ 100V

FET Feature

Super Junction

Current - Continuous Drain (Id) @ 25°C

10.3A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

3.5V @ 200µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

600mOhm @ 2.4A, 10V

Series

CoolMOS™

Power Dissipation (Max)

28W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO220 Full Pack

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

20.5nC @ 10V