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Toshiba Semiconductor and Storage TK19A45D(STA4,Q,M)
MOSFET N-CH 450V 19A TO-220SIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 2.97
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.5mOhm @ 100A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 300W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO263-7
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 206nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 14800pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 180A
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-7, D²Pak (6 Leads + Tab)
- Vgs(th) (Max) @ Id
- 3.5V @ 275µA