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Toshiba Semiconductor and Storage TK16E60W5,S1VX
MOSFET N-CH 600V 15.8A TO-220AB
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 1200V
- Vgs (Max)
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 3091pF @ 800V
- Technology
- SiC (Silicon Carbide Junction Transistor)
- Current - Continuous Drain (Id) @ 25°C
- 45A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 50mOhm @ 20A
- Series
- -
- Power Dissipation (Max)
- 282W (Tc)
- FET Type
- -
- Supplier Device Package
- TO-247AB