Toshiba Semiconductor and Storage TK14G65W5,RQ

Product Details

Series

π-MOSVII

Power Dissipation (Max)

40W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220SIS

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

450V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

770mOhm @ 4.5A, 10V