Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage TK14E65W,S1X
MOSFET N-CH 650V 13.7A TO-220
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 2.91
- Stock
- 5
Product Details
- Rds On (Max) @ Id, Vgs
- 500mOhm @ 4A, 10V
- Series
- -
- Power Dissipation (Max)
- 150W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-263
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 800pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)