Toshiba Semiconductor and Storage TK14A55D(STA4,Q,M)

Product Details

Rds On (Max) @ Id, Vgs

170mOhm @ 11A, 10V

Series

SuperFET® II

Power Dissipation (Max)

227W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-247-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2860pF @ 380V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

3.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)