Toshiba Semiconductor and Storage TK10P60W,RVQ

Product Details

FET Type

P-Channel

Supplier Device Package

LPTS

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

60nC @ 5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8000pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

25A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

2.5V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

63mOhm @ 25A, 10V

Series

-

Power Dissipation (Max)

50W (Tc)