Toshiba Semiconductor and Storage TK100S04N1L,LQ

Product Details

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

3.8V @ 49µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

5.2mOhm @ 47.5A, 10V

Series

OptiMOS™

Power Dissipation (Max)

2.5W (Ta), 83W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TDSON-8-7

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

80V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 40V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

95A (Tc)