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Toshiba Semiconductor and Storage TK100L60W,VQ
MOSFET N CH 600V 100A TO3P(L)
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 30.11
- Stock
- 65
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V, 15V
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Vgs(th) (Max) @ Id
- 4.5V @ 8mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 300mOhm @ 13.5A, 10V
- Series
- HiPerFET™
- Power Dissipation (Max)
- 520W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-227B
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 400nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 9740pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 27A (Tc)