Toshiba Semiconductor and Storage TK100A06N1,S4X

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 25V

FET Feature

Schottky Diode (Isolated)

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

5V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

196mOhm @ 9.5A, 10V

Series

-

Power Dissipation (Max)

68W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220FM

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V