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Toshiba Semiconductor and Storage TJ50S06M3L(T6L1,NQ
MOSFET P-CH 60V 50A DPAK-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.77
- Stock
- 0
Product Details
- Vgs (Max)
- +10V, -20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6510pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 60A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3V @ 1mA
- Operating Temperature
- 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 6.3mOhm @ 30A, 10V
- Series
- U-MOSVI
- Power Dissipation (Max)
- 90W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- DPAK+
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 125nC @ 10V