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Toshiba Semiconductor and Storage SSM6N48FU,RF(D

MOSFET 2N-CH 30V 0.1A

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
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Product Details

Supplier Device Package
PG-TDSON-8-4
Series
Automotive, AEC-Q101, OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
39nC @ 10V
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
60V
Packaging
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
2890pF @ 25V
FET Feature
Logic Level Gate
Current - Continuous Drain (Id) @ 25°C
20A
Part Status
Discontinued at Digi-Key
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
2.2V @ 20µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
13.7mOhm @ 17A, 10V