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Toshiba Semiconductor and Storage SSM6K411TU(TE85L,F
MOSFET N-CH 20V 10A
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 779pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 15A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 102mOhm @ 5A, 10V
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Power Dissipation (Max)
- 60W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- LFPAK56, Power-SO8
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 12.2nC @ 10V