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Toshiba Semiconductor and Storage SSM6K208FE,LF
SMALL SIGNAL MOSFET N-CH VDSS30V
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- Automotive, AEC-Q101
- Power Dissipation (Max)
- 700mW (Ta), 8.3W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-236AB
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 14nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 440pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6.2A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 20mOhm @ 5.8A, 10V