Toshiba Semiconductor and Storage SSM6J216FE,LF

Product Details

FET Type

N-Channel

Supplier Device Package

1206-8 ChipFET™

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

435pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

28mOhm @ 6.8A, 10V

Series

TrenchFET®

Power Dissipation (Max)

2.3W (Ta), 5.7W (Tc)