Toshiba Semiconductor and Storage SSM3K36MFV,L3F

Product Details

Rds On (Max) @ Id, Vgs

2Ohm @ 500mA, 10V

Series

-

Power Dissipation (Max)

300mW (Ta)

FET Type

N-Channel

Supplier Device Package

SOT-23 (TO-236AB)

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

280mA (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-65°C ~ 150°C (TJ)