Toshiba Semiconductor and Storage SSM3K35CT,L3F

Product Details

Package / Case

TO-247-3

Base Part Number

STW45N

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-65°C ~ 150°C (TJ)

Series

MDmesh™

Rds On (Max) @ Id, Vgs

100mOhm @ 22.5A, 10V

FET Type

N-Channel

Power Dissipation (Max)

417W (Tc)

Packaging

Tube

Supplier Device Package

TO-247-3

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

117nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

3700pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V