Toshiba Semiconductor and Storage SSM3K335R,LF

Product Details

Series

-

Power Dissipation (Max)

700mW (Ta)

FET Type

P-Channel

Supplier Device Package

TSMT3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

4.9nC @ 2.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

430pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

SC-96

Vgs(th) (Max) @ Id

2V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

135mOhm @ 2A, 4.5V