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Toshiba Semiconductor and Storage SSM3K316T(TE85L,F)

MOSFET N-CH 30V 4A TSM

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
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Stock
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Product Details

Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Part Status
Discontinued at Digi-Key
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Vgs(th) (Max) @ Id
3.1V @ 250µA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
2.1Ohm @ 500mA, 10V
Series
-
Power Dissipation (Max)
150mW (Ta)
FET Type
N-Channel
Supplier Device Package
USM
Packaging
Cut Tape (CT)
Drain to Source Voltage (Vdss)
60V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
17pF @ 25V