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Toshiba Semiconductor and Storage SSM3K15CT(TPL3)

MOSFET N-CH 30V 0.1A CST3

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
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Product Details

Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
50mOhm @ 4A, 10V
Series
-
Power Dissipation (Max)
1.4W (Ta)
FET Type
P-Channel
Supplier Device Package
SOT-23-3
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Vgs (Max)
±12V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
645pF @ 15V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
1.3V @ 250µA