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Toshiba Semiconductor and Storage SSM3K15ACT(TPL3)

MOSFET N-CH 30V 0.1A CST3

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
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Product Details

Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2200pF @ 6V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Vgs(th) (Max) @ Id
-
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
16.9mOhm @ 4.5A, 4.5V
Series
-
Power Dissipation (Max)
1.5W (Ta)
FET Type
P-Channel
Supplier Device Package
6-MCPH
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
20.5nC @ 4.5V
Vgs (Max)
±10V
Drain to Source Voltage (Vdss)
12V