Toshiba Semiconductor and Storage SSM3K01T(TE85L,F)

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3630pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Vgs(th) (Max) @ Id

5V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

240mOhm @ 11A, 10V

Series

POWER MOS 8™

Power Dissipation (Max)

335W (Tc)

FET Type

N-Channel

Supplier Device Package

D3Pak

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

500V