Toshiba Semiconductor and Storage SSM3J35MFV,L3F

Product Details

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.3V @ 1mA

Operating Temperature

-55°C ~ 150°C (TA)

Rds On (Max) @ Id, Vgs

16mOhm @ 10A, 10V

Series

SkyFET®, TrenchFET®

Power Dissipation (Max)

4.1W (Tc)

FET Type

N-Channel

Supplier Device Package

8-SO

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

17.5nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

521pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

11.9A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount