Toshiba Semiconductor and Storage SSM3J144TU,LF

Product Details

FET Type

N-Channel

Supplier Device Package

UFM

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

2nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

177pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

800mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Mounting Type

Surface Mount

Package / Case

3-SMD, Flat Leads

Vgs(th) (Max) @ Id

1V @ 1mA

Operating Temperature

150°C

Rds On (Max) @ Id, Vgs

57mOhm @ 800mA, 4.5V

Series

U-MOSVII-H

Power Dissipation (Max)

1W (Ta)