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Toshiba Semiconductor and Storage SSM3J120TU,LF
MOSFET P-CH 20V 4A UFM
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Leads
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 350mOhm @ 1A, 10V
- Series
- -
- Power Dissipation (Max)
- 800mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- TUMT3
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 1.9nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 120pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1A (Ta)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V