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Toshiba Semiconductor and Storage SSM3J108TU(TE85L)
MOSFET P-CH 20V 1.8A UFM
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- U-MOSVI-H
- Power Dissipation (Max)
- -
- FET Type
- N-Channel
- Supplier Device Package
- DP
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 17.5nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1150pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 40A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2.3V @ 100µA
- Operating Temperature
- -
- Rds On (Max) @ Id, Vgs
- 10.8mOhm @ 20A, 10V