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Toshiba Semiconductor and Storage RN2306,LF

TRANS PREBIAS PNP 0.1W USM

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
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Product Details

Frequency - Transition
250MHz
Supplier Device Package
S-Mini
Resistor - Emitter Base (R2)
22 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Series
-
Current - Collector (Ic) (Max)
100mA
Packaging
Digi-Reel®
Current - Collector Cutoff (Max)
500nA
Part Status
Discontinued at Digi-Key
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Power - Max
200mW
Voltage - Collector Emitter Breakdown (Max)
50V
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Resistor - Base (R1)
47 kOhms