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Toshiba Semiconductor and Storage RN2108(T5L,F,T)
TRANS PREBIAS PNP 0.1W SSM
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Packaging
- Digi-Reel®
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 56 @ 50mA, 5V
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Power - Max
- 200mW
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Transistor Type
- NPN - Pre-Biased
- Frequency - Transition
- 200MHz
- Supplier Device Package
- SST3
- Resistor - Emitter Base (R2)
- 10 kOhms
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 2.5mA, 50mA
- Current - Collector (Ic) (Max)
- 500mA
- Series
- -
- Current - Collector Cutoff (Max)
- 500nA (ICBO)