Toshiba Semiconductor and Storage RN2105ACT(TPL3)

Product Details

Part Status

Obsolete

Voltage - Collector Emitter Breakdown (Max)

15V

Power - Max

350mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Type

NPN

Base Part Number

2N3563

Operating Temperature

-55°C ~ 150°C (TJ)

Frequency - Transition

1.5GHz

Supplier Device Package

TO-92-3

Gain

14dB ~ 26dB

Noise Figure (dB Typ @ f)

-

Series

-

Current - Collector (Ic) (Max)

50mA

Packaging

Tape & Box (TB)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 8mA, 10V