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Toshiba Semiconductor and Storage RN1104MFV,L3F
TRANS PREBIAS NPN 0.15W VESM
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- -
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Part Status
- Active
- Power - Max
- 150mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-723
- Transistor Type
- NPN - Pre-Biased
- Resistor - Base (R1)
- 47 kOhms
- Supplier Device Package
- VESM
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 5mA
- Current - Collector (Ic) (Max)
- 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 5V