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Toshiba Semiconductor and Storage 2SK4016(Q)
MOSFET N-CH 600V 13A TO220SIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Stub Leads, IPak
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 2.5A, 10V
- Series
- U-MOSIII
- Power Dissipation (Max)
- 20W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PW-MOLD2
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 730pF @ 10V