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Toshiba Semiconductor and Storage 2SK2719(F)
MOSFET N-CH 900V 3A TO-3PN
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4Ohm @ 4A, 10V
- Series
- -
- Power Dissipation (Max)
- 85W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-3P(N)IS
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 58nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 900V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2040pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3