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Toshiba Semiconductor and Storage 2SK2034TE85LF

MOSFET N-CH 20V 100MA USM

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.12
Stock
461

Product Details

Power Dissipation (Max)
480W (Tc)
Series
-
Supplier Device Package
TO-263AA
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
105nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
150V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
5500pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
150A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4.5V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
6.9mOhm @ 75A, 10V