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Toshiba Semiconductor and Storage 2SJ438,Q(J
MOSFET P-CH
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 19mOhm @ 3A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2.5W (Ta), 13W (Tc)
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 4.5V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 12V
- Vgs (Max)
- ±5V
- Current - Continuous Drain (Id) @ 25°C
- 9A (Tc)
- Technology
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SC-75-6L
- Vgs(th) (Max) @ Id
- 800mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)