Toshiba Semiconductor and Storage 2SJ360(F)

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

120mOhm @ 6.5A, 5V

Series

-

Power Dissipation (Max)

2.5W (Ta), 46W (Tc)

FET Type

N-Channel

Supplier Device Package

D-Pak

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

24nC @ 5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

755pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

5V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2V @ 250µA