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Toshiba Semiconductor and Storage 2SJ304(F)
MOSFET P-CH 60V 14A TO220NIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 155pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 730mOhm @ 500mA, 10V
- Series
- -
- Power Dissipation (Max)
- 500mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- PW-MINI
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 6.5nC @ 10V