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Toshiba Semiconductor and Storage 2SA1315-Y,T6ASNF(J
TRANS PNP 2A 80V TO226-3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Packaging
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 150 @ 500mA, 2V
- Part Status
- Obsolete
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Power - Max
- 900mW
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Transistor Type
- PNP
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 110MHz
- Supplier Device Package
- TO-92MOD
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 33mA, 1A
- Current - Collector (Ic) (Max)
- 2A
- Series
- -
- Current - Collector Cutoff (Max)
- 100nA (ICBO)