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Texas Instruments CSD25213W10
MOSFET P-CH 20V 1.6A 4DSBGA
- Manufacturer
- Texas Instruments
- Datasheet
- Price
- 0
- Stock
- 19925
Product Details
- Package / Case
- 3-XFDFN
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 32mOhm @ 4A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 700mW (Ta)
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 23.7nC @ 8V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 12V
- Vgs (Max)
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds
- 1291pF @ 10V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 5.5A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Part Status
- Active
- Mounting Type
- Surface Mount