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Texas Instruments CSD19535KTTT
MOSFET N-CH 100V 200A TO263
- Manufacturer
- Texas Instruments
- Datasheet
- Price
- 0
- Stock
- 3162
Product Details
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1370pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-247-3
- Base Part Number
- STW10N
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- SuperMESH™
- Rds On (Max) @ Id, Vgs
- 750mOhm @ 4.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 156W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-247-3
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 70nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V