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Texas Instruments CSD16570Q5BT
MOSFET N-CH 25V 100A 8VSON
- Manufacturer
- Texas Instruments
- Datasheet
- Price
- 0
- Stock
- 7887
Product Details
- Vgs(th) (Max) @ Id
- 3.4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- NexFET™
- Rds On (Max) @ Id, Vgs
- 10.5mOhm @ 55A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 188W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-220-3
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 35nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 2670pF @ 50V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 100A (Ta)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Package / Case
- TO-220-3
- Base Part Number
- CSD19533