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Taiwan Semiconductor Corporation UG2JAHR3G
DIODE GEN PURP 600V 2A DO214AC
- Manufacturer
- Taiwan Semiconductor Corporation
- Datasheet
- Price
- 0
- Stock
- 3475
Product Details
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 2A
- Series
- Automotive, AEC-Q101
- Operating Temperature - Junction
- 150°C (Max)
- Packaging
- Digi-Reel®
- Voltage - Forward (Vf) (Max) @ If
- 575mV @ 2A
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 3-UDFN Exposed Pad
- Capacitance @ Vr, F
- 250pF @ 1V, 1MHz
- Supplier Device Package
- DFN2020D-3
- Reverse Recovery Time (trr)
- 5.5ns
- Current - Reverse Leakage @ Vr
- 250µA @ 60V
- Voltage - DC Reverse (Vr) (Max)
- 60V